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| HSC106D HSC106D Sensitive Gate Silicon Controlled Rectifier FEATURES Repetitive Peak Off-State Voltage (VRM= 400V) R.M.S On-state Current (IT(RMS)=4.0A) Average On-state Current (IT(AV)=2.55A) Sensitive Gate Triggering (0.2mAMax@25) VDRM = 400 V IT(RMS) = 4.0A Symbol 2.Anode 3.Gate 1.Cathode General Description Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control ; process and remote control, and warning systems where reliability of operation is important. 1 2 3 HSC106D Absolute Maximum Ratings Symbol VDRM VRRM IT(RMS) IT(AV) ITSM I2t PGM PG(AV) VGRM IFGM TSTG Tj Parameter (TJ=25) Value 400 400 4.0 2.55 20 1.65 0.5 0.1 6.0 0.2 -40 to +150 -40 to +110 Units V V A A A A2s W W V A Repetitive Peak Off-State Voltage (Forward) Repetitive Peak Off-State Voltage (Reverse) On-State R.M.S Current (180 Condition Angles, TC=80) On-State Average Current (180 Condition Angles, TC=80) Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non-repetitive, Tj = 110 C) Circuit Fusing Considerations (t=8.3mS) Forward Peak Gate Power Dissipation (Pulse Width 1.0sec,Tc=80) Forward Average Gate Power Dissipation (Pulse Width 1.0sec, Tc=80) Reverse Peak Gate Voltage Forward Peak Gate Current (Pulse Width 1.0 sec, Tc=80) Storage Temperature Range Operating Junction Temperature SEMIHOW REV.1.1 May 2007 HSC106D Electrical Characteristics Symbol IGT VGT VGD Parameter Gate Trigger Current(1) Gate Trigger Voltage(1) Non Trigger Gate Voltage (Ta=25) Test Conditions VAK= 6VDC, RL= 100, TJ= 25 VAK= 6VDC, RL= 100, TJ= -40 VAK= 6VDC, RL= 100, TJ= 25 VAK= 6VDC, RL= 100, TJ= -40 VAK= 12VDC, RL= 100, TC= 110 VAK= 12VDC, Gate open, Initiating current=20mA, TJ= 25 TJ= -40 TJ = 110 VAK= 12VDC, IG= 20mA, Gate Open, TJ= 25 TJ= 110 VAK= VDRM or VRRM, TC= 25 TC= 110 Min Typ 15 35 Max 200 500 0.8 1.0 Units uA V V 0.4 0.5 0.2 0.6 0.75 IH Holding Current 0.19 0.33 0.07 0.2 0.35 3.0 6.0 2.0 5.0 10 100 2.2 mA IL IDRM IRRM VTM dv/dt (1) (2) Latching Current Repetitive or Reverse Peak Blocking Current Peak Forward On-State Voltage(2) Critical Rate of Rise Off state Voltage mA uA uA V V/uS IFM=1A VAK = VDRM, Exponential waveform, RGK= 1, Gate open, TJ=110 8.0 RGK Current is not included in measurement Pulse Test : Pulse width 2.0mS, Duty Cycle 2% Thermal Characteristics Symbol RTH(J-C) RTH(J-A) TL Parameter Thermal Resistance Thermal Resistance Conditions Junction to Case Junction to Ambient Min Typ Max 3.0 75 260 Units /W /W Maximum Lead Temperature for Soldering Purpose 1/8", from case for 10second SEMIHOW REV.1.1 May 2007 HSC106D Performance Curves Fig 1. Average Current Derating 110 100 TC, Case Temperature () P(AV), Average On-State Power Dissipation (Watt) Fig 2. Maximum On-State Power Dissipation 10 Junction Temperature = 110 8 Half Sine Wave Resistive or Inductive Load 50 to 400Hz DC 90 80 70 60 50 40 30 20 10 0 .4 .8 1.2 Half Sine Wave Resistive or Inductive Load 50 to 400Hz DC 6 4 2 0 0 .4 .8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IT(AV) Average On-State Current (A) 1.6 2.0 2.4 2.8 3.2 3.6 4.0 IT(AV) Average On-State Current (A) Fig 3. Typical Gate Trigger Current vs Junction Temperature 100 100 Fig 4. Typical Holding Current vs Junction Temperature IGT, Gate Trigger Current (A) IH, Holding Current (A) 10 10 1 -40 -25 -10 5 20 35 50 65 80 95 110 TJ Junction Temperature () 1 -40 -25 -10 5 20 35 50 65 80 95 110 TJ Junction Temperature () Fig 5. Typical Gate Trigger Voltage vs Junction Temperature 1.0 0.9 VGT, Gate Trigger Voltage (V) Fig 6. Typical Latching Current vs Junction Temperature 1000 0.7 0.6 0.5 0.4 0.3 0.2 -40 -25 -10 IL, Latching Current (A) 0.8 100 10 5 20 35 50 65 80 95 110 -40 -25 -10 5 20 35 50 65 80 95 110 TJ Junction Temperature () TJ Junction Temperature () SEMIHOW REV.1.1 May 2007 HSC106D Package Dimension HSC106D (TO-126) A C D L1 b a L B C1 p p Dimension Table Symbol A B C C1 D L 3.6 Dimension Min 1.27 Typ 4.0 13.0 Max 8.5 12.0 2.8 Symbol L1 a b p Unit :[ mm] Dimension Min 2.3 3.0 0.7 1.2 Typ 2.3 Max 2.7 3.4 0.86 SEMIHOW REV.1.1 May 2007 |
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